| PART |
Description |
Maker |
| 2SC3360 |
High DC current gain.hFE=90 to 450 High voltage VCEO=200V
|
TY Semiconductor Co., Ltd
|
| 2SB624 |
Micro package. High dc current gain. hFE:200TYP. (VCE=-1V, IC=-100mA)
|
TY Semiconductor Co., Ltd
|
| 2SA1434 |
Adoption of FBET process. High DC current gain (hFE=500 to 1200).
|
TY Semiconductor Co., L...
|
| 2SD780A |
Micro package. High DC current gain. hFE: 200TYP.(VCE=1.0V,IC=50mA).
|
TY Semiconductor Co., Ltd
|
| 2SA1813 |
Very small-sized package. Adoption of FBET process. High DC current gain (hFE=500 to 1200).
|
TY Semiconductor Co., Ltd
|
| 2SA1411 |
Very high DC current gain:hFE=500 to 1600. High VEBO Voltage:VEBO=-10V
|
TY Semiconductor Co., Ltd
|
| HN1C07F |
Excellent Current Gain(hFE)linearity
|
TY Semiconductor Co., Ltd
|
| 2SJ621 2SJ621-T2B 2SJ621-T1B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC Corp.
NEC[NEC]
|
| BC636 BC640 BC638 Q68000-A3367 Q68000-A3366 Q68000 |
PNP Silicon AF Transistors (High current gain High collector current) 自动对焦进步党硅晶体管（高电流增益高集电极电流）
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BCP68-10 BCP68-16 Q62702-C2126 Q62702-C2128 Q62702 |
From old datasheet system
NPN Silicon AF Transistor (For general AF application High collector current High current gain)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BC516 Q62702-C944 |
PNP Silicon Darlington Transistor (High current gain High collector current)
From old datasheet system
|
Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BDP954 Q62702-D1340 BDP952 BDP956 Q62702-D1344 Q62 |
PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
